1n914 document number 85622 rev. 1.8, 17-aug-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com fast switching diodes features ? fast switching speed ? high reliability ? high conductance ? for general purpose switching applicions ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c unless otherwise specified part ordering code type marking remarks 1n914 1n914-tr or 1N914-TAP 1n914 tape and reel/ammopack parameter test condition symbol value unit non repetitive peak reverse voltage v rm 100 v repetitive peak reverse voltage v rrm 75 v working peak reverse voltage v rwm 75 v dc blocking voltage v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current i f 300 ma average rectified current half wave rectification with resistive load and f > 50 mhz i fav 200 ma non repetitive peak forward surge current t = 1 s i fsm 1a t = 1 s i fsm 4a power dissipation i = 4 mm, t l = 25 c p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air i = 4 mm, t l = constant r thja 300 k/w junction temperature t j + 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85622 rev. 1.8, 17-aug-10 1n914 vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified package dimensions in millimeters (inches): do-35 parameter test condition symbol min. ty p. max. unit forward voltage i f = 10 ma v f 1000 mv breakdown voltage i r = 100 a v (br) 100 v peak reverse current v r = 75 v i r 5a v r = 20 v, t j = 150 c i r 50 a v r = 20 v i r 25 na diode capacitance v r = 0, f = 1 mhz c d 4pf reverse recovery time i f = 10 ma to i r = 1 ma, v r = 6 v, r l = 100 t rr 4ns figure 1. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9170_1 scattering limit t = 25 c j 1 n 914 figure 2. reverse current vs. reverse voltage 1 10 100 1000 i r - re v erse c u rrent (na) v r - re v erse v oltage ( v ) 10 1 100 94 909 8 t j = 25 c scattering limit 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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